Characterization and Design Consideration of I-MOS Devices
نویسندگان
چکیده
Nanoscale I-MOS devices were demonstrated by using a novel device structure. They showed a normal transistor operation with subthreshold swing less than 12.2 mV/dec at room temperature. We also investigated some critical issues were also discussed in device design such as the junction depth of the source extension region and the substrate doping concentration.
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تاریخ انتشار 2006